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SI7804DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 10A 3.5W 18.5mohm @ 10V
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Inventory: 16517
Minimum: 1
Total Price: USD $1.41
Unit Price: USD $1.409468
≥1 USD $1.409468
≥10 USD $1.1571
≥100 USD $1.12119
≥500 USD $1.084283
≥1000 USD $1.048373

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Dimensions

Height 1.04mm
Length 3.3mm
Width 3.3mm

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