Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 76A
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 190A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 97 mJ
Nominal Vgs 1.8 V