Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series aMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 263pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.9Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 77 mJ