TK10A60E,S5X

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package TO-220-3 Full Pack

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS

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Inventory: 9660

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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ

Packaging Tube

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Resistance 750mOhm

Technology MOSFET (Metal Oxide)

Number of Channels 1

Power Dissipation-Max 45W Tc

Element Configuration Single

FET Type N-Channel

Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V

Vgs(th) (Max) @ Id 4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V

Current - Continuous Drain (Id) @ 25°C 10A Ta

Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V

Drain to Source Voltage (Vdss) 600V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Continuous Drain Current (ID) 10A

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