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TK8A65D(STA4,Q,M)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 5A TO-220SIS
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Inventory: 202
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.147609
≥1 USD $0.147609
≥10 USD $0.143268
≥100 USD $0.138926
≥500 USD $0.1335

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2004
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 45W Tc
Power Dissipation 45W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 840mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.35nF
Rds On Max 840 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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