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APT47N60BC3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 600 V 0.07 Ohm 260 nC Super Junction Power MOSFET-TO-247-3
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Inventory: 189
Minimum: 1
Total Price: USD $6.56
Unit Price: USD $6.557789
≥1 USD $6.557789
≥10 USD $6.364913
≥100 USD $6.172037
≥500 USD $5.930942

Technical Details

Supply Chain

Factory Lead Time 24 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 70mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 47A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 417W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Input Capacitance (Ciss) (Max) @ Vds 7015pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 47A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON

Dimensions

Height 5.31mm
Length 21.46mm
Width 16.26mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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