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STB12NM50T4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 550V 12A D2PAK
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Inventory: 2772
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.01581
≥1 USD $1.01581
≥10 USD $0.985933
≥100 USD $0.956056
≥500 USD $0.91871

Technical Details

Supply Chain

Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 350mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 550V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 12A
Base Part Number STB12N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 400 mJ
Nominal Vgs 4 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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