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SIHU4N80E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-251-3 Long Leads, IPak, TO-251AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CHAN 800V TO-251
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package IPAK (TO-251)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 69W Tc
Power Dissipation 69W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 622pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 1.1Ohm

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 8.5mm

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