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IPA80R1K0CEXKSA2

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V TO-220-3
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Inventory: 103
Minimum: 1
Total Price: USD $3.48
Unit Price: USD $3.480595
≥1 USD $3.480595
≥10 USD $3.034188
≥100 USD $2.769092

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1997
Series CoolMOS? CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 32W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 32W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 5.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 230 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 19.6mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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