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TK31J60W,S1VQ

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 30.8A TO-3P(N)
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Inventory: 25068
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Capacitance 3nF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 230W Tc
Element Configuration Single
Power Dissipation 230W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C 30.8A Ta
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 30.8A
Drain to Source Breakdown Voltage 600V
Input Capacitance 3nF
FET Feature Super Junction
Drain to Source Resistance 88mOhm
Rds On Max 88 mΩ

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