Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 11mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Case Connection ISOLATED
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 71A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 142A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 48 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 142A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 576A
Avalanche Energy Rating (Eas) 2500 mJ