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TPN14006NH,L1Q

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 60V 13A 8TSON-ADV
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 13.9mOhm
Capacitance 1nF
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 30V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 6.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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