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SIB417EDK-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-75-6L
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 8V 9A SC75-6
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Inventory: 3026
Minimum: 1
Total Price: USD $14.1
Unit Price: USD $14.095673
≥1 USD $14.095673
≥10 USD $11.566013
≥100 USD $11.20392
≥500 USD $10.842825
≥1000 USD $10.48173

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-75-6L
Number of Pins 6
Weight 95.991485mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 4V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 31 ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 5.8A
Drain-source On Resistance-Max 0.058Ohm
DS Breakdown Voltage-Min 8V
Nominal Vgs -1 V

Dimensions

Height 750μm
Length 1.6mm
Width 1.6mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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