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RoHS
RoHS RoHS compliant
Package TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 2A TO251A
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Inventory: 9186
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.116708
≥1 USD $0.116708
≥10 USD $0.09576
≥100 USD $0.092768
≥500 USD $0.089775
≥1000 USD $0.086783
≥10000 USD $0.077805

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 56.8W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 2A
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 8A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 120 mJ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Transistor Element Material SILICON
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