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FDMA8884

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V Single N-Channel PowerTrench MOSFET
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Inventory: 2749
Minimum: 1
Total Price: USD $0.73
Unit Price: USD $0.72618
≥1 USD $0.72618
≥10 USD $0.596505
≥100 USD $0.577553
≥500 USD $0.5586
≥1000 USD $0.540645

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ULTRA-LOW RESISTANCE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta 8A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Rise Time 1 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 28 pF

Dimensions

Height 750μm
Length 2mm
Width 2mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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