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SI3851DV-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 1.6A 6-TSOP
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Inventory: 1988
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Technical Details

Supply Chain

Factory Lead Time 21 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series LITTLE FOOT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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