Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET?
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 13V
Current - Continuous Drain (Id) @ 25°C 35A Ta 213A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 280A
FET Feature Schottky Diode (Body)