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IRF840PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description PLANAR >= 100V
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Inventory: 3708
Minimum: 1
Total Price: USD $1.72
Unit Price: USD $1.71864
≥1 USD $1.71864
≥10 USD $1.383228
≥100 USD $1.138091
≥500 USD $0.963012
≥1000 USD $0.817112
≥3000 USD $0.776252

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 8A
Power Dissipation-Max 125W Tc
Power Dissipation 125W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Drain to Source Resistance 850mOhm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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