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IRF840PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description PLANAR >= 100V
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Inventory: 3708
Minimum: 1
Total Price: USD $1.72
Unit Price: USD $1.71864
≥1 USD $1.71864
≥10 USD $1.383228
≥100 USD $1.138091
≥500 USD $0.963012
≥1000 USD $0.817112
≥3000 USD $0.776252

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 8A
Power Dissipation-Max 125W Tc
Power Dissipation 125W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Drain to Source Resistance 850mOhm

Alternative Model

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