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IXTU01N100D

IXYS
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 0.1A TO-251
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Inventory: 4421
Minimum: 1
Total Price: USD $1.41
Unit Price: USD $1.409468
≥1 USD $1.409468
≥10 USD $1.1571
≥100 USD $1.12119
≥500 USD $1.084283
≥1000 USD $1.048373

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.1W Ta 25W Tc
Element Configuration Single
Power Dissipation 1.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80 Ω @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Rise Time 6 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 110Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 0.4A
FET Feature Depletion Mode

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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