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SIHP14N50D-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SIHP14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
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Inventory: 7980
Minimum: 1
Total Price: USD $2.56
Unit Price: USD $2.555506
≥1 USD $2.555506
≥10 USD $2.410859
≥100 USD $2.274389
≥500 USD $2.14565
≥1000 USD $2.024201

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Dimensions

Height 9.01mm
Length 10.51mm
Width 4.65mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1144pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 56 mJ

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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