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RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 75A TO-262
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Inventory: 15156
Minimum: 1
Total Price: USD $0.84
Unit Price: USD $0.835905
≥1 USD $0.835905
≥10 USD $0.68628
≥100 USD $0.665333
≥500 USD $0.643388
≥1000 USD $0.62244
≥3000 USD $0.557603

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Dimensions

Height 9.65mm
Length 10.668mm
Width 4.826mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 95 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 440A
Avalanche Energy Rating (Eas) 250 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
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