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CSD17305Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V N Channel NexFET Power MOSFET
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Inventory: 17661
Minimum: 1
Total Price: USD $2.26
Unit Price: USD $2.255348
≥1 USD $2.255348
≥10 USD $1.85136
≥100 USD $1.793505
≥500 USD $1.73565
≥1000 USD $1.677795

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17305
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 8.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 8V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 4.5V
Rise Time 16.5ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 7.9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0054Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 304 mJ
Nominal Vgs 1.1 V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Alternative Model

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