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IPL65R650C6SATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 650V 6.7A ThinPAK 5x6
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Inventory: 5393
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.657654
≥1 USD $0.657654
≥10 USD $0.620421
≥100 USD $0.585306
≥500 USD $0.552174
≥1000 USD $0.520913

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 75.891673mg
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? C6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 56.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 9 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.65Ohm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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