Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 33W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V