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TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 4A TO-220SIS
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Inventory: 152
Minimum: 1
Total Price: USD $0.8
Unit Price: USD $0.80388
≥1 USD $0.80388
≥10 USD $0.662508
≥100 USD $0.48085
≥500 USD $0.401755
≥1000 USD $0.341926
≥3000 USD $0.304532

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 380pF
Rds On Max 2 Ω

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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