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BSC096N10LS5ATMA1

Infineon Technologies
RoHS
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Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRENCH >=100V
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Inventory: 8021
Minimum: 1
Total Price: USD $0.71
Unit Price: USD $0.707999
≥1 USD $0.707999
≥10 USD $0.687176
≥100 USD $0.666352
≥500 USD $0.640323

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Series OptiMOS? 5
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 50V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 4.5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 72A
Drain-source On Resistance-Max 0.0096Ohm
Pulsed Drain Current-Max (IDM) 287A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 45 mJ

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