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IPB80P03P4L07ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263
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Inventory: 2058
Minimum: 1
Total Price: USD $8.46
Unit Price: USD $8.457803
≥1 USD $8.457803
≥10 USD $6.939608
≥100 USD $6.72315
≥500 USD $6.505695
≥1000 USD $6.289238

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0069Ohm

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