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TN0610N3-G-P003

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH Enhancmnt Mode MOSFET
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Inventory: 2192
Minimum: 1
Total Price: USD $1.1
Unit Price: USD $1.104807
≥1 USD $1.104807
≥10 USD $1.042266
≥100 USD $0.983278
≥500 USD $0.92762
≥1000 USD $0.875117

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON

Dimensions

Height 5.33mm
Length 5.21mm
Width 4.19mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 100V

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