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TJ60S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 60A DPAK-3
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Inventory: 4634
Minimum: 1
Total Price: USD $1.23
Unit Price: USD $1.233908
≥1 USD $1.233908
≥10 USD $1.012463
≥100 USD $0.98154
≥500 USD $0.94962
≥1000 USD $0.9177

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-XSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6510pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 96ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) +10V, -20V
Fall Time (Typ) 240 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0094Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 146 mJ

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