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IPB70P04P409ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 40V 72A 3-Pin(2+Tab) TO-263
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 4.4mm
Length 10mm
Width 9.25mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 120μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 31 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) -70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -40V
Drain Current-Max (Abs) (ID) 72A
Drain-source On Resistance-Max 0.0094Ohm
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 288A
Avalanche Energy Rating (Eas) 24 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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