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IRF740STRRPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 400V 10A D2PAK
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Inventory: 5750
Minimum: 1
Total Price: USD $2.52
Unit Price: USD $2.523675
≥1 USD $2.523675
≥10 USD $2.07081
≥100 USD $2.005973
≥500 USD $1.941135
≥1000 USD $1.876298

Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 27 ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.55Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 520 mJ

Alternative Model

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