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CSD19532Q5BT

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A VSON
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Inventory: 4616
Minimum: 1
Total Price: USD $2.5
Unit Price: USD $2.50404
≥1 USD $2.50404
≥10 USD $2.105796
≥100 USD $1.703394

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19532
Number of Elements 1
Power Dissipation-Max 3.1W Ta 195W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.0057Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 274 mJ

Dimensions

Length 5mm
Width 6mm
Thickness 950μm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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