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SQM110N05-06L_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 110A TO263
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Inventory: 1586
Minimum: 1
Total Price: USD $1.85
Unit Price: USD $1.846119
≥1 USD $1.846119
≥10 USD $1.791822
≥100 USD $1.737524
≥500 USD $1.669652

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)
Weight 1.437803g

Dimensions

Height 4.83mm
Length 10.41mm
Width 9.65mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 157W Tc
Element Configuration Single
Power Dissipation 157W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 4.44nF
Drain to Source Resistance 6mOhm
Rds On Max 6 mΩ
Nominal Vgs 2 V

Supply Chain

Factory Lead Time 12 Weeks

Alternative Model

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