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IXFP16N50P3

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET Polar3 HiPerFET Power MOSFET
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Inventory: 261
Minimum: 1
Total Price: USD $4.9
Unit Price: USD $4.8972
≥1 USD $4.8972
≥10 USD $4.1118
≥100 USD $3.32677
≥500 USD $2.957096
≥1000 USD $2.532018
≥3000 USD $2.38417

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 1515pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 500V

Dimensions

Height 16mm
Length 10.66mm
Width 4.83mm

Compliance

RoHS Status ROHS3 Compliant
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