Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 18.5A
Number of Elements 1
Voltage 600V
Power Dissipation-Max 300W Tc
Element Configuration Single
Current 16A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 65 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 210 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 135 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 18.5A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 1150 mJ