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RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description NCH 650V 24A POWER MOSFET. R652
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Inventory: 171
Minimum: 1
Total Price: USD $5.91
Unit Price: USD $5.9136
≥1 USD $5.9136
≥10 USD $5.06814

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 245W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 4V @ 750μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.185Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 654 mJ

Compliance

RoHS Status ROHS3 Compliant
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