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IPB60R045P7ATMA1

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description HIGH POWER_NEW
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Inventory: 2948
Minimum: 1
Total Price: USD $3.18
Unit Price: USD $3.18046
≥1 USD $3.18046
≥10 USD $3.086917
≥100 USD $2.993374
≥500 USD $2.876445

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technical

Operating Temperature -55°C~150°C TJ
Series CoolMOS? P7
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 201W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.08mA
Input Capacitance (Ciss) (Max) @ Vds 3891pF @ 400V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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