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IXFR32N100Q3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 23A ISOPLUS247
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Inventory: 165
Minimum: 1
Total Price: USD $39.8
Unit Price: USD $39.79668
≥1 USD $39.79668
≥10 USD $35.460348
≥100 USD $31.12494

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 570W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 570W
Case Connection ISOLATED
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 300ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.35Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 3000 mJ

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 21.34mm
Length 16.13mm
Width 5.21mm

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