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EPC2021ENGR

EPC
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRANS GAN 80V 60A BUMPED DIE
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series eGaN?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id 2.5V @ 14mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 60A
Input Capacitance 1.7nF
Rds On Max 2.5 mΩ
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