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IXTQ30N60P

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 30A TO-3P
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Inventory: 7039
Minimum: 1
Total Price: USD $14.1
Unit Price: USD $14.095673
≥1 USD $14.095673
≥10 USD $11.566013
≥100 USD $11.20392
≥500 USD $10.842825
≥1000 USD $10.48173

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 540W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 1500 mJ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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