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IXFH7N100P

IXYS
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH
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Inventory: 3745
Minimum: 1
Total Price: USD $2.03
Unit Price: USD $2.032905
≥1 USD $2.032905
≥10 USD $1.66782
≥100 USD $1.61595
≥500 USD $1.56408
≥1000 USD $1.511213

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?, Polar?
Part Status Active
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 7A

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