Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 600W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.011Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 2500 mJ