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IXFT42N50P2

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 42A TO268
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Inventory: 5461
Minimum: 1
Total Price: USD $9.27
Unit Price: USD $9.270797
≥1 USD $9.270797
≥10 USD $8.746037
≥100 USD $8.250981
≥500 USD $7.783943
≥1000 USD $7.343346

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?, PolarHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 126A
Avalanche Energy Rating (Eas) 1400 mJ

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