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IGLD60R190D1AUMA1
Infineon TechnologiesRoHS
/
Package 8-LDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IGLD60R190D1: 600 V 10 A CoolGaN? Enhancement-Mode Power Transistor - LSON-8
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Pricing & Ordering
Inventory: 2334
Minimum: 1
Total Price: USD $6.24
Unit Price: USD $6.242096
≥1 USD $6.242096
≥10 USD $6.058505
≥100 USD $5.874914
≥500 USD $5.645425
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad
Technical
Operating Temperature -55°C~150°C TJ
Series CoolGaN?
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 1.6V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) -10V
Alternative Model
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