Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series HiPerFET?, PolarP2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 220A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 2000 mJ