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IXFR36N60P

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 20A ISOPLUS247
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Inventory: 336
Minimum: 1
Total Price: USD $13.54
Unit Price: USD $13.5366
≥1 USD $13.5366
≥10 USD $10.960488
≥100 USD $10.315841
≥500 USD $9.348709
≥1000 USD $8.575016

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 1500 mJ
Isolation Voltage 2.5kV

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