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IXFX200N10P

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 200A PLUS247
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Inventory: 1944
Minimum: 1
Total Price: USD $14.97
Unit Price: USD $14.968543
≥1 USD $14.968543
≥10 USD $14.121262
≥100 USD $13.321954
≥500 USD $12.567873
≥1000 USD $11.856487

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 235nC @ 10V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 4000 mJ

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