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IXFT12N100F

IXYS
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 12A TO268
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series HiPerRF?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Rise Time 9.8 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 48A
Dual Supply Voltage 1kV
Avalanche Energy Rating (Eas) 1000 mJ
Nominal Vgs 5.5 V

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