Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +20V, -5V