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NTB125N02RT4

Rochester Electronics, LLC
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Inventory: 203
Minimum: 1
Total Price: USD $0.32
Unit Price: USD $0.320198
≥1 USD $0.320198
≥10 USD $0.262343
≥100 USD $0.254363
≥500 USD $0.246383
≥1000 USD $0.238403

Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 95A
Drain-source On Resistance-Max 0.0062Ohm
Pulsed Drain Current-Max (IDM) 250A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 120 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Alternative Model

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